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SDP20S30
Silicon Carbide Schottky Diode * Revolutionary semiconductor material - Silicon Carbide * Switching behavior benchmark * No reverse recovery * No temperature influence on the switching behavior * No forward recovery
1 2 3
thinQ!
SiC Schottky Diode
Product Summary VRRM Qc IF 300 23 2x10
P-TO220
V nC A
Type SDP20S30
Package P-TO220-3
Ordering Code Q67040-S4419
Marking D20S30
Maximum Ratings, at Tj = 25 C, unless otherwise specified (per leg) Parameter Continuous forward current, TC=100C RMS forward current, f=50Hz
TC=25C, tp=10ms
Symbol IF IFRMS
Value 10 14 36 45 100 6.5 300 300 65 -55... +175
Unit A
Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150C, TC=100C, D=0.1
IFRM IFMAX i2dt VRRM VRSM Ptot Tj , Tstg
Non repetitive peak forward current
tp=10s, TC=25C
i 2t value, TC=25C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, single diode mode, TC=25C Operating and storage temperature
As V W C
Rev. 1.5
Page 1
2009-11-25
SDP20S30
Thermal Characteristics Parameter Characteristics Symbol min. Values typ. max. Unit
Thermal resistance, junction - case (per leg)
RthJC
-
-
2.3
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified (per leg) Parameter Static Characteristics Diode forward voltage
IF=10A, Tj=25C IF=10A, Tj=150C
Symbol min. VF IR -
Values typ. max.
Unit
V 1.5 1.5 15 20 1.7 1.9 A 200 1000
Reverse current
V R=300V, T j=25C V R=300V, T j=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air.
Rev. 1.5
Page 2
2009-11-25
SDP20S30
Electrical Characteristics, at Tj = 25 C, unless otherwise specified (per leg) Parameter Symbol Values min. AC Characteristics Total capacitive charge 1)
V R=200V, IF=10A, diF /dt=-200A/s, Tj =150C
Unit
typ. 23 n.a.
max. nC ns pF
Qc t rr
C
-
Switching time2)
V R=200V, IF=10A, diF /dt=-200A/s, Tj =150C
Total capacitance
V R=0V, T C=25C, f=1MHz V R=150V, T C=25C, f=1MHz V R=300V, T C=25C, f=1MHz
-
600 55 40
-
Rev. 1.5
Page 3
2009-11-25
SDP20S30
1 Power dissipation (per leg)
Ptot = f (TC)
70
2 Diode forward current (per leg) IF= f (TC) parameter: Tj175 C
11
W
A
9 8
60 55 50
Ptot
40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140
IF C 180 TC
45
7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140
C 180 TC
3 Typ. forward characteristic (per leg) IF = f (VF) parameter: Tj , tp = 350 s
20
4 Typ. forward power dissipation vs. average forward current (per leg)
PF(AV)=f(IF) TC=100C, d = tp/T
32
A
16
W
24 14
PF(AV)
IF
12 10 8 6 4 2 0 0.6
20
16
-40C 25C 100C 125C 150C
12
d=1 d=0.5 d=0.2 d=0.1
8
4
0.8
1
1.2
1.4
1.6
1.8
2.2 V VF
0 0
2
4
6
8
10
12
14
18 A IF(AV)
Rev. 1.5
Page 4
2009-11-25
SDP20S30
5 Typ. reverse current vs. reverse voltage (per leg)IR=f(VR )
10
2
6 Transient thermal impedance (per leg)
ZthJC = f (t p)
parameter : D = t p/T
A
10 1
SDP20S30
K/W
10 1
10 0
10 0
ZthJC
10 -1
IR
10 -1
D = 0.50
10
-2
150C 125C 100C 25C
10
-2
0.20 0.10 0.05 single pulse 0.02 0.01
10 -3
10
-3
10 -4 50
100
150
200
V VR
300
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
7 Typ. capacitance vs. reverse voltage (per leg)C= f(VR) parameter: TC = 25 C, f = 1 MHz
450
8 Typ. C stored energy (per leg)
EC=f(V R)
2.5
pF J
350 300
EC
1 2 3 10 V VR
1.5
C
250 200
1 150 100 50 00 10 0 0
0.5
10
10
50
100
150
200
V VR
300
Rev. 1.5
Page 5
2009-11-25
SDP20S30
9 Typ. capacitive charge vs. current slope (per leg)Qc=f(diF/dt) parameter: Tj = 150 C
22
nC
18 16
IF*2 IF *0.5
IF
Qc
14 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 A/s 1000
diF /dt
Rev. 1.5
Page 6
2009-11-25
SDP20S30
P-TO220-3-1, P-TO220-3-21
Rev. 1.5
Page 7
2009-11-25
SDP20S30
Rev. 1.5
Page 8
2009-11-25

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